Inventor · Beacon, NY, US

Ravikumar Ramachandran

111Patents
14h-index
163Co-inventors
89Inventor score

Filing activity: Jun 25, 1997 → Sep 23, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US5807439A Apparatus and method for improved washing and drying of semiconductor wafers Emerging Cross-Sectional Technologies 79 Expired
US5980770A Removal of post-RIE polymer on Al/Cu metal line Emerging Cross-Sectional Technologies 38 Expired
US8426300B2 Self-aligned contact for replacement gate devices Electricity 34 Active
US5932493A Method to minimize watermarks on silicon substrates Electricity 24 Expired
US7838908B2 Semiconductor device having dual metal gates and method of manufacture Electricity 23 Active
US6274440A Manufacturing of cavity fuses on gate conductor level Electricity 20 Expired
US6858441B2 MRAM MTJ stack to conductive line alignment method Emerging Cross-Sectional Technologies 20 Expired
US8536656B2 Self-aligned contacts for high k/metal gate process flow Electricity 20 Active
US9431399B1 Method for forming merged contact for semiconductor device Electricity 18 Active
US5934299A Apparatus and method for improved washing and drying of semiconductor wafers Emerging Cross-Sectional Technologies 18 Expired
US8928057B2 Uniform finFET gate height Electricity 17 Active
US8928086B2 Strained finFET with an electrically isolated channel Electricity 15 Active
US7122439B2 Method of fabricating a bottle trench and a bottle trench capacitor Electricity 15 Expired
US9496362B1 Contact first replacement metal gate Electricity 15 Active
US8629014B2 Replacement metal gate structures for effective work function control Electricity 14 Active
US7122437B2 Deep trench capacitor with buried plate electrode and isolation collar Electricity 14 Expired
US7485510B2 Field effect device including inverted V shaped channel region and method for fabrication thereof Electricity 14 Active
US6358855B1 Clean method for recessed conductive barriers Electricity 14 Expired
US9082851B2 FinFET having suppressed leakage current Electricity 13 Active
US7691701B1 Method of forming gate stack and structure thereof Electricity 13 Active
US9190520B2 Strained finFET with an electrically isolated channel Electricity 13 Active
US6569769B1 Slurry-less chemical-mechanical polishing Electricity 12 Expired
US7943457B2 Dual metal and dual dielectric integration for metal high-k FETs Electricity 11 Active
US8815693B2 FinFET device formation Electricity 11 Active
US6149830A Composition and method for reducing dishing in patterned metal during CMP process Electricity 11 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.