SiC semiconductor device comprising a pn junction
US5932894A · kind A · utility
30Cited by
5References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 26, 1997 |
| Grant date | Aug 3, 1999 |
| Priority date | — |
| Expiry date | Jun 26, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/117
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device of planar structure, comprises a pn junction, formed of a first type conducting layer and on top thereof a second type conducting layer, both layers of doped silicon carbide, the edge of the second of the layers being provided with an edge termination (JTE), enclosing stepwise or continuously decreasing effective sheet charge density towards the outer border of the termination, wherein the pn junction and its JTE are covered by a doped or undoped SiC third layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.