Semiconductor laser
US5933443A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 4, 1996 |
| Grant date | Aug 3, 1999 |
| Priority date | — |
| Expiry date | Sep 4, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2209
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser including a first conductive type of lower clad layer, active layer, a second conductive type of upper first clad layer, the first conductive type of current blocking layer having a stripe shaped open portion, and the second conductive type of upper second clad layer laminated in order on the first conductive type of GaAs substrate, wherein each portion in contact with the lower clad layer, the active layer, the upper first and second clad layer and at least the upper second clad layer of the current blocking layer is composed of a compound semiconductor to be represented by a formula, in which (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P (x is 0<x.ltoreq.1 in the lower and upper first, second clad layers, 0.ltoreq.x<1 in the active layer, a given value y is approximately 0.5 for each layer) within of each range of 0<x.ltoreq.0.75 in the portion in contact with the upper second clad layer of the current blocking layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.