Yuta Tezen
15Patents
9h-index
13Co-inventors
65Inventor score
Filing activity: Oct 12, 1995 → Sep 15, 2005
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7491984B2 | Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices | Electricity | 158 | Expired |
| US7052979B2 | Production method for semiconductor crystal and semiconductor luminous element | Electricity | 19 | Expired |
| US7462867B2 | Group III nitride compound semiconductor devices and method for fabricating the same | Electricity | 15 | Expired |
| US6861305B2 | Methods for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices | Electricity | 14 | Expired |
| US7141444B2 | Production method of III nitride compound semiconductor and III nitride compound semiconductor element | Electricity | 12 | Expired |
| US6631149B1 | Laser diode using group III nitride group compound semiconductor | Electricity | 12 | Expired |
| US6855620B2 | Method for fabricating Group III nitride compound semiconductor substrates and semiconductor devices | Electricity | 11 | Expired |
| US6979584B2 | Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor device | Electricity | 10 | Expired |
| US6967122B2 | Group III nitride compound semiconductor and method for manufacturing the same | Electricity | 9 | Expired |
| US5933443A | Semiconductor laser | Electricity | 8 | Expired |
| US7560725B2 | Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices | Electricity | 8 | Expired |
| US6830948B2 | Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor device | Electricity | 7 | Expired |
| US6680957B1 | Group III nitride compound semiconductor laser | Electricity | 5 | Expired |
| US5661581A | Optical communication unit | Physics | 2 | Expired |
| US6518599B2 | Light-emitting device using group III nitride group compound semiconductor | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.