Passivation and protection of semiconductor surface
US5933705A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 1997 |
| Grant date | Aug 3, 1999 |
| Priority date | — |
| Expiry date | Sep 12, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0282
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A surface of a compound III-V semiconductor device is passivated and protected, respectively, by treatment with a sulfur-containing or selenium-containing passivation film on the surface followed by the deposit of a GaN, GaP, InGaP, GaAsP, ZnS or ZnSe protection layer. Prior to passivation and deposition of the protective layer, previously formed contact metalizations may be protected with a liftoff film or layer. A low temperature MOCVD process is used to deposit the protection layer so that the integrity of the previously deposited contact metalization is maintained. The preferred range for MOCVD deposition of the protection layer is in the range of about 300.degree. C. to about 450.degree. C. This processing temperature range is within a temperature range where stable contact metalization exists.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.