Randall S. Geels
18Patents
10h-index
12Co-inventors
69Inventor score
Filing activity: Apr 26, 1995 → Mar 3, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6172756A | Rapid and accurate end point detection in a noisy environment | Physics | 107 | Expired |
| US6184985A | Spectrometer configured to provide simultaneous multiple intensity spectra from independent light sources | Physics | 42 | Expired |
| US5850411A | Transverse electric (TE) polarization mode AlGaInP/GaAs red laser diodes, especially with self-pulsating operation | Electricity | 31 | Expired |
| US6181721A | Visible wavelength, semiconductor optoelectronic device with a high power broad, significantly laterally uniform, diffraction limited output beam | Electricity | 21 | Expired |
| US6148013A | Visible wavelength, semiconductor optoelectronic device with a high power broad, significantly laterally uniform, diffraction limited output beam | Electricity | 18 | Expired |
| US7095511B2 | Method and apparatus for high-speed thickness mapping of patterned thin films | Physics | 15 | Expired |
| US5933705A | Passivation and protection of semiconductor surface | Electricity | 14 | Expired |
| US6307873A | Visible wavelength, semiconductor optoelectronic device with a high power broad, significantly laterally uniform, diffraction limited output beam | Electricity | 13 | Expired |
| US7151609B2 | Determining wafer orientation in spectral imaging | Physics | 13 | Expired |
| US5799028A | Passivation and protection of a semiconductor surface | Electricity | 13 | Expired |
| US6148014A | Visible wavelength semiconductor optoelectronic device with a high power broad, significantly laterally uniform, diffraction limited output beam | Electricity | 10 | Expired |
| US5654229A | Method for replicating periodic nonlinear coefficient patterning during and after growth of epitaxial ferroelectric oxide films | Emerging Cross-Sectional Technologies | 10 | Expired |
| USRE36802E | Transverse electric (TE) polarization mode AlGaInP/GaAs red laser diodes, especially with self-pulsating operation | General | 4 | Expired |
| US7502119B2 | Thin-film metrology using spectral reflectance with an intermediate in-line reference | Physics | 4 | Active |
| US6272162A | Visible wavelength, semiconductor optoelectronic device with a high power broad, significantly laterally uniform, diffraction limited output beam | Electricity | 3 | Expired |
| US8908177B2 | Correction of second-order diffraction effects in fiber-optic-based spectrometers | Physics | 0 | Active |
| US11099068B2 | Optical instrumentation including a spatially variable filter | Physics | 0 | Active |
| US10240981B2 | Optical spectrometer configuration including spatially variable filter (SVF) | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.