Method of manufacturing a semiconductor device
US5933719A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 11, 1997 |
| Grant date | Aug 3, 1999 |
| Priority date | — |
| Expiry date | Mar 11, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
Abstract
The proposed semiconductor device can provide a capacitor having an excellent capacitance controllability thereof and a high reliability thereof. A method of manufacturing a semiconductor device comprises the steps of: forming a first insulating film on a semiconductor substrate on which a lower capacitor electrode has been formed; removing the first insulating film at a capacitor forming region on the lower capacitor electrode; forming a second insulating film on the semiconductor substrate; forming a conductive film on the formed second insulating film; patterning the conductive film and the second insulating film, to leave both the films at least at the capacitor forming region; patterning the first insulating film, to form a contact hole with the lower capacitor electrode at a region other than the capacitor forming region; and dry etching the lower capacitor electrode, to remove a natural oxide film formed at a bottom of the contact hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.