Mizuki Ono
39Patents
12h-index
25Co-inventors
81Inventor score
Filing activity: May 28, 1993 → Aug 27, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7364972B2 | Semiconductor device | Electricity | 62 | Active |
| US6278165A | MIS transistor having a large driving current and method for producing the same | Electricity | 45 | Expired |
| US6642575B1 | MOS transistor with vertical columnar structure | Electricity | 44 | Expired |
| US6495890B1 | Field-effect transistor with multidielectric constant gate insulation layer | Electricity | 44 | Expired |
| US5990516A | MOSFET with a thin gate insulating film | Electricity | 37 | Expired |
| US5965918A | Semiconductor device including field effect transistor | Electricity | 35 | Expired |
| US5434440A | Semiconductor device and method of manufacturing the same | Emerging Cross-Sectional Technologies | 27 | Expired |
| US7902594B2 | Semiconductor component and semiconductor device | Electricity | 23 | Active |
| US6724025B1 | MOSFET having high and low dielectric materials | Electricity | 21 | Expired |
| US5898203A | Semiconductor device having solid phase diffusion sources | Emerging Cross-Sectional Technologies | 18 | Expired |
| US5698881A | MOSFET with solid phase diffusion source | Electricity | 14 | Expired |
| US5903027A | MOSFET with solid phase diffusion source | Electricity | 14 | Expired |
| US6229164A | MOSFET with a thin gate insulating film | Electricity | 9 | Expired |
| US6410952B1 | MOSFET with a thin gate insulating film | Electricity | 7 | Expired |
| US5780901A | Semiconductor device with side wall conductor film | Emerging Cross-Sectional Technologies | 7 | Expired |
| US7303965B2 | MIS transistor and method for producing same | Electricity | 6 | Expired |
| US6690047B2 | MIS transistor having a large driving current and method for producing the same | Electricity | 5 | Expired |
| US5933719A | Method of manufacturing a semiconductor device | Electricity | 5 | Expired |
| US7816242B2 | Semiconductor device and method of manufacturing the same | Electricity | 4 | Active |
| US5955761A | Semiconductor device and manufacturing method thereof | Emerging Cross-Sectional Technologies | 4 | Expired |
| US6847084B2 | Semiconductor device | Electricity | 3 | Expired |
| US6642560B2 | MOSFET with a thin gate insulating film | Electricity | 3 | Expired |
| US7465998B2 | Semiconductor device | Electricity | 2 | Expired |
| US5766965A | Semiconductor device and method of manufacturing the same | Emerging Cross-Sectional Technologies | 2 | Expired |
| US7605421B2 | Non-volatile semiconductor memory element and method of manufacturing the same, and semiconductor integrated circuit device including the non-volatile semiconductor memory element | Electricity | 2 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.