Method for the heat treatment of II-VI semiconductors
US5933751A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 23, 1998 |
| Grant date | Aug 3, 1999 |
| Priority date | — |
| Expiry date | Jan 23, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/971
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An object of the invention is to provide a method for the heat treatment of II-VI semiconductors such as ZnS, ZnS.sub.x Se.sub.1-x, Zn.sub.y Cd.sub.1-y Se, etc. to dope with Group III elements as a donor impurity to reduce its resistivity. This object can be attained by a method for the heat treatment of II-VI semiconductors in a closed vessel, which comprises forming a film of a Group III element as a donor impurity or a Group III element-containing compound on a surface of single crystal of II-VI semiconductors, then charging the single crystal and a Group II element for constituting the single crystal in the closed vessel and heating them in such a manner that the both are not contacted with each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.