Inventor · Itami, JP

Ryu Hirota

37Patents
10h-index
23Co-inventors
75Inventor score

Filing activity: Aug 11, 1997 → Sep 16, 2019

Most-cited inventions

PatentTitleAreaCited byStatus
US7303630B2 Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate Chemistry; Metallurgy 280 Active
US7655960B2 A1xInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing same Electricity 64 Active
US7105865B2 AlxInyGa1−x−yN mixture crystal substrate Electricity 37 Expired
US6667184B2 Single crystal GaN substrate, method of growing same and method of producing same Electricity 36 Expired
US7772585B2 Nitride semiconductor substrate and method of producing same Electricity 18 Active
US7473315B2 AlxInyGa1-x-yN mixture crystal substrate, method of growing AlxInyGa1-x-yN mixture crystal substrate and method of producing AlxInyGa1-x-yN mixture crystal substrate Chemistry; Metallurgy 16 Active
US6475277B1 Group III-V nitride semiconductor growth method and vapor phase growth apparatus Emerging Cross-Sectional Technologies 16 Expired
US7112826B2 Single crystal GaN substrate semiconductor device Electricity 15 Expired
US7589000B2 Fabrication method and fabrication apparatus of group III nitride crystal substance Chemistry; Metallurgy 12 Active
US7771532B2 Nitride semiconductor substrate and method of producing same Electricity 12 Active
US7905958B2 Group III-nitride semiconductor crystal and manufacturing method thereof, and group III-nitride semiconductor device Electricity 8 Active
US7087114B2 Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate Chemistry; Metallurgy 7 Expired
US7998847B2 III-nitride crystal manufacturing method, III-nitride crystal substrate, and III-nitride semiconductor device Electricity 7 Active
US5933751A Method for the heat treatment of II-VI semiconductors Emerging Cross-Sectional Technologies 7 Expired
US7297625B2 Group III-V crystal and manufacturing method thereof Emerging Cross-Sectional Technologies 6 Expired
US8002892B2 Group III nitride crystal substrate, method of its manufacture, and group III nitride semiconductor device Electricity 5 Expired
US7129525B2 Semiconductor light-emitting device Electricity 5 Expired
US8310030B2 III-nitride crystal substrate and III-nitride semiconductor device Electricity 3 Active
US7354477B2 Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate Chemistry; Metallurgy 3 Active
US7858502B2 Fabrication method and fabrication apparatus of group III nitride crystal substance Chemistry; Metallurgy 2 Active
US7485484B2 Group III-V crystal Emerging Cross-Sectional Technologies 2 Active
US7794543B2 Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate Chemistry; Metallurgy 2 Active
US8134223B2 III-V compound crystal and semiconductor electronic circuit element Electricity 2 Active
US7288151B2 Method of manufacturing group-III nitride crystal Chemistry; Metallurgy 1 Expired
US8404569B2 Fabrication method and fabrication apparatus of group III nitride crystal substance Chemistry; Metallurgy 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.