Open-bottomed via liner structure and method for fabricating same
US5933753A · kind A · utility
160Cited by
11References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 16, 1996 |
| Grant date | Aug 3, 1999 |
| Priority date | — |
| Expiry date | Dec 16, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention relates to a method of forming a bottomless liner structure. The method involves the steps of first obtaining a material having a via. Next, a first layer is deposited on the material, the first layer covering the sidewalls and bottom of the via. Finally, a second layer is sputter deposited on the first material, the material Rf biased during at least a portion of the time that the second layer is sputter deposited, such that the first layer deposited on the bottom of the via is substantially removed and substantially all of the first layer deposited on the sidewalls of the via is unaffected.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.