Self-aligned pattern over a reflective layer
US5935763A · kind A · utility
203Cited by
9References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 11, 1996 |
| Grant date | Aug 10, 1999 |
| Priority date | — |
| Expiry date | Jun 11, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/2008
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An opening in an insulator on a substrate is self-aligned to a reflective region on the substrate. The opening is formed by shining blanket radiation on photoresist on the insulator and developing to open the resist and insulator. The resist region that is above the reflective region absorbs both incident and reflected radiation, a larger total dose of radiation than is absorbed by resist above non-reflective regions. The incident dose is adjusted to provide a below threshold dose everywhere except to those regions of resist that are above highly reflective regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.