Semiconductor on silicon (SOI) transistor with a halo implant
US5936278A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 1997 |
| Grant date | Aug 10, 1999 |
| Priority date | — |
| Expiry date | Mar 7, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6744
Abstract
A semiconductor over insulator transistor (100) includes a semiconductor mesa (36) formed over an insulating layer (34) which overlies a semiconductor substrate (32). Source and drain regions (66, 68) of a first conductivity type are formed at opposite ends of the mesa. A body node (56) of a second conductivity type is located between the source and drain regions in the mesa. A gate insulator (40) and a gate electrode (46) lie over the body node. Halo implants (54, 56) are placed to completely separate the source and drain regions from the body node, or channel regions, for improving short channel effect. The transistor is useful as a pass gate and as a peripheral transistor in a DRAM, and also is useful in digital and analog applications and in low power applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.