MOSFET for input/output protective circuit having a multi-layered contact structure with multiple contact holes on a single diffusion layer
US5936283A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 5, 1997 |
| Grant date | Aug 10, 1999 |
| Priority date | — |
| Expiry date | Aug 5, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to the present invention, a MOSFET for an input/output protective circuit in which a source diffusion layer, a drain diffusion layer and a gate electrode are formed on a semiconductor substrate comprises a high melting point metal silicide layer disposed on the drain diffusion layer through a first insulating film, a metal wire layer disposed on the high melting point metal silicide layer through a second insulating film, at least two first contact holes for electrically connecting the high melting point metal silicide layer and the metal wire layer, and a second contact hole for electrically connecting the high melting point metal silicide layer and the drain diffusion layer, wherein the second contact hole is disposed at a substantial center between the two first contact holes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.