Vertical cavity-emitting porous silicon carbide light-emitting diode device and preparation thereof
US5939732A · kind A · utility
39Cited by
4References
10Claims
0Family size
Assignee
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Key dates
| Filing date | May 22, 1997 |
| Grant date | Aug 17, 1999 |
| Priority date | — |
| Expiry date | May 22, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/835
Abstract
A multilayered LED structure which has an active light-emitting layer of porous silicon carbide and a sequence of layers of porous silicon carbide underneath which serves as a quarter-wavelength multilayer mirror. The result is the electroluminescent emission of spectrally narrow visible light in the deep blue to UV range, in a highly directed pattern. The deep, intense blue luminescence is accomplished via the appropriate preparation and passivation of a single porous silicon carbide layer, followed by the deposition of a transparent, semiconducting layer, such as ITO (In.sub.2 O.sub.3) or ZnO.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.