Ferroelectric memory device using a ferroelectric material and method of reading data from the ferroelectric memory device
US5940316A · kind A · utility
12Cited by
2References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 19, 1998 |
| Grant date | Aug 17, 1999 |
| Priority date | — |
| Expiry date | Jun 19, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A ferroelectric memory device hardly affected by variations in characteristic of a ferroelectric capacitor is provided. Capacitors in two dummy memory cells are used such that one capacitor is a ferroelectric capacitor and always outputs a voltage corresponding to "0" while the other capacitor outputs a voltage corresponding to a sensitivity of a sense amplifier, both of the voltages are collectively used as a reference voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.