Method for programming a flash memory
US5943261A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 7, 1998 |
| Grant date | Aug 24, 1999 |
| Priority date | — |
| Expiry date | Aug 7, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6892
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of programming a flash memory device. The method includes a step of applying a voltage that is less than a threshold voltage to a select gate of a flash memory device. Electrons are transferred from a source/drain region or preferably the source region through a region underlying the select gate to a channel region underlying a floating gate. The transferring step occurs using an electron gradient from a higher concentration region in the source region to a lower concentration region in the channel region. By way of a selected voltage applied to a control gate, one of a plurality of selected voltage levels are applied to the floating gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.