Method for etching damaged zones on an edge of a semiconductor substrate, and etching system
US5945351A · kind A · utility
112Cited by
1References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 2, 1997 |
| Grant date | Aug 31, 1999 |
| Priority date | — |
| Expiry date | Jun 2, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/168
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The apparatus and method of the invention allow etching of the edge of a semiconductor substrate even where no resist is applied to the front side and back side of the semiconductor substrate. The semiconductor substrate is introduced into a protective chamber within an evacuatable process chamber. The front side and the back side of the semiconductor substrate are covered by the protective chamber except for the edge of the semiconductor substrate to be etched. The edge of the semiconductor substrate is then exposed to an etching agent. Etching products and excess etching agent are removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.