Compound semiconductor device having reduced temperature variability
US5945694A · kind A · utility
11Cited by
0References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 31, 1997 |
| Grant date | Aug 31, 1999 |
| Priority date | — |
| Expiry date | Jan 31, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/405
Abstract
A semiconductor device (20) is formed on a compound semiconductor substrate (21). The semiconductor device (20) is oriented on the surface (40) of the compound semiconductor substrate (21) such that the physical forces that result from the thermal heating or cooling of the compound semiconductor substrate (21) are essentially equal. This orientation reduces the variability of the drain to source current of the semiconductor device (20) as the semiconductor device (20) is operated at different temperatures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.