Single-cell reference signal generating circuit for reading nonvolatile memory
US5946238A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 17, 1997 |
| Grant date | Aug 31, 1999 |
| Priority date | — |
| Expiry date | Jun 17, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/28
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory having a memory array including a plurality of data cells and a read circuit. The read circuit includes a plurality of sense amplifiers, each connected to a respective array branch to be connected to the data cells. The nonvolatile memory also includes a reference generating circuit including a single reference cell arranged outside the memory array and generates a reference signal. The reference generating circuit includes a plurality of reference branches, each connected to a respective sense amplifier, and circuits interposed between the reference cell and the reference branches to supply the reference branches with a signal based on the reference signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.