Unique .alpha.-C:N:H/.alpha.-C:N.sub.x film liner/barrier to prevent fluorine outdiffusion from .alpha.-FC chemical vapor deposition dielectric layers
US5946601A · kind A · utility
33Cited by
3References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 31, 1997 |
| Grant date | Aug 31, 1999 |
| Priority date | — |
| Expiry date | Dec 31, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is a liner and/or barrier layer that will encapsulate the low k materials and act as a diffusion barrier between the low k material and the surrounding metal layers. As the temperatures of the processing sequence increase the liner and/or barrier layer will decrease the diffusion of fluorine from the low k material into the surrounding metal layers. Thus, the present invention will reduce potential corrosion problems of the metal layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.