Inventor · Fremont, CA, US

Lawrence Wong

47Patents
11h-index
71Co-inventors
78Inventor score

Filing activity: Nov 25, 1997 → Mar 24, 2020

Most-cited inventions

PatentTitleAreaCited byStatus
US7115995B2 Structural reinforcement of highly porous low k dielectric films by Cu diffusion barrier structures Electricity 62 Expired
US6057226A Air gap based low dielectric constant interconnect structure and method of making same Electricity 57 Expired
US7968469B2 Method of processing a workpiece in a plasma reactor with variable height ground return path to control plasma ion density uniformity Electricity 39 Active
US5946601A Unique .alpha.-C:N:H/.alpha.-C:N.sub.x film liner/barrier to prevent fluorine outdiffusion from .alpha.-FC chemical vapor deposition dielectric layers Electricity 33 Expired
US8734664B2 Method of differential counter electrode tuning in an RF plasma reactor Electricity 23 Active
US6432811B1 Method of forming structural reinforcement of highly porous low k dielectric films by Cu diffusion barrier structures Electricity 21 Expired
US6417098B1 Enhanced surface modification of low K carbon-doped oxide Electricity 19 Expired
US6703324B2 Mechanically reinforced highly porous low dielectric constant films Electricity 19 Expired
US6566757B1 Stabilization of low dielectric constant film with in situ capping layer Electricity 17 Expired
US6472315B2 Method of via patterning utilizing hard mask and stripping patterning material at low temperature Electricity 13 Expired
US6734533B2 Electron-beam treated CDO films Emerging Cross-Sectional Technologies 11 Expired
US6984581B2 Structural reinforcement of highly porous low k dielectric films by ILD posts Electricity 11 Expired
US7192856B2 Forming dual metal complementary metal oxide semiconductor integrated circuits Electricity 11 Expired
US7214594B2 Method of making semiconductor device using a novel interconnect cladding layer Electricity 11 Expired
US6846737B1 Plasma induced depletion of fluorine from surfaces of fluorinated low-k dielectric materials Electricity 9 Expired
US6973297B1 Method and apparatus for down-conversion of radio frequency (RF) signals with reduced local oscillator leakage Electricity 8 Expired
US7988815B2 Plasma reactor with reduced electrical skew using electrical bypass elements Electricity 8 Active
US8076247B2 Plasma process uniformity across a wafer by controlling RF phase between opposing electrodes Electricity 7 Active
US7354862B2 Thin passivation layer on 3D devices Electricity 7 Expired
US6083839A Unique chemical mechanical planarization approach which utilizes magnetic slurry for polish and magnetic fields for process control Chemistry; Metallurgy 7 Expired
US6284091A Unique chemical mechanical planarization approach which utilizes magnetic slurry for polish and magnetic fields for process control Chemistry; Metallurgy 7 Expired
US9161428B2 Independent control of RF phases of separate coils of an inductively coupled plasma reactor Electricity 7 Active
US7879731B2 Improving plasma process uniformity across a wafer by apportioning power among plural VHF sources Electricity 7 Active
US6992391B2 Dual-damascene interconnects without an etch stop layer by alternating ILDs Electricity 6 Expired
US8080479B2 Plasma process uniformity across a wafer by controlling a variable frequency coupled to a harmonic resonator Electricity 5 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.