Method of fabricating a semiconductor device and method of cleaning a crystalline semiconductor surface
US5948161A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 24, 1995 |
| Grant date | Sep 7, 1999 |
| Priority date | — |
| Expiry date | Mar 24, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In fabricating a semiconductor device, a semiconductor layer containing Al and a cap layer not containing Al are successively grown on a semiconductor substrate and are placed in a halogen gas environment where a chemical reaction between a halogen and an oxide film naturally formed on the cap layer removes the oxide film. Then, without exposing the layer to the atmosphere, the halogen gas environment is replaced with a dry-etching environment and the cap layer is dry-etched to a desired depth. Then, without exposing a semiconductor layer to the atmosphere, the dry-etching environment is replaced with a crystal growth environment. Subsequently, another semiconductor layer is grown on the semiconductor layer. A regrowth interface of excellent cleanliness is realized and the crystallinity of the regrown semiconductor layer is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.