Thin film deposition apparatus
US5948167A · kind A · utility
6Cited by
5References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 27, 1996 |
| Grant date | Sep 7, 1999 |
| Priority date | — |
| Expiry date | Sep 27, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32633
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A thin film deposition apparatus which includes a mesh type radio frequency (RF) electrode plate adapted to form plasma, a baffle guide adapted to prevent the plasma from diffusing at a low pressure, and a control unit adapted to perform control of temperature for preventing a reacting raw material from generating a degraded reaction in a gas injector, thereby enabling formation of a multi-element thin film using a multi-element reacting raw material and formation of a uniform thin film having a high density to obtain micro patterns of highly integrated semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.