Undercoating composition for photolithographic patterning
US5948847A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 4, 1997 |
| Grant date | Sep 7, 1999 |
| Priority date | — |
| Expiry date | Dec 4, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/091
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An undercoating composition layer to intervene between the surface of a substrate, e.g., a silicon wafer, and a photoresist layer to prevent noxious reflection of exposure light on the substrate surface in the photolithographic patterning work for the manufacture of semiconductor devices comprising: (A) a nitrogen-containing organic compound, as a crosslinking agent, having, in a molecule, at least two amino groups each substituted by at least one substituent selected from the group consisting of hydroxyalkyl groups and alkoxyalkyl groups; and (B) a homopolymer of or a copolymer of a mixture of monomers of which one is a (meth)acrylic acid ester of an aromatic hydroxyl compound selected from the group consisting of bisphenylsulfone compounds having at least one hydroxyl group in a molecule and benzophenone compounds having at least one hydroxyl group in a molecule in a specified proportion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.