Semiconductor device having a gate electrode with only two crystal grains
US5949102A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 1997 |
| Grant date | Sep 7, 1999 |
| Priority date | — |
| Expiry date | Jun 10, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/661
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprises a semiconductor substrate, and a plurality of semiconductor elements provided on the semiconductor substrate. Each of the semiconductor elements includes a gate dielectric film formed on the semiconductor substrate, a gate electrode formed on the semiconductor substrate with the gate dielectric film interposed therebetween, and having a pair of side surfaces, and source/drain regions formed in a surface of the semiconductor substrate along the pair of the side surfaces. The gate electrode contains a plurality of crystal grains, and the number of the crystal grains is substantially equal to the number of crystal grains contained in any other gate electrode of all the semiconductor elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.