In-situ pre-ILD deposition treatment to improve ILD to metal adhesion
US5950107A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 1996 |
| Grant date | Sep 7, 1999 |
| Priority date | — |
| Expiry date | Dec 17, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76885
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for improving interlayer dielectric to metal layer adhesion including an in-situ plasma treatment process. A metal layer which is formed on a substrate is treated with plasma prior to the deposition of the interlayer dielectric. The interlayer dielectric is deposited above the metal layer and contacts are formed through the interlayer dielectric which electrically connect the underlying metal layer to a subsequently formed metal layer. The plasma treatment step creates open molecular bonds on the surface of the metal layer which cause the interface between the metal layer and the interlayer dielectric to become more adhesive. Thus, decreasing the likelihood of delamination that degrades the electrical reliability of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.