Semiconductor memory device having a trench capacitor with lower electrode inside the trench
US5952687A · kind A · utility
83Cited by
10References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 8, 1997 |
| Grant date | Sep 14, 1999 |
| Priority date | — |
| Expiry date | Jul 8, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/014
Abstract
A semiconductor memory device having a semiconductor substrate, an insulating layer provided on the substrate, and a memory cell. The memory cell has a switching transistor provided on the substrate and a charge storage element in a trench made in the insulating layer. The charge storage element has a bottom electrode, a dielectric layer and a top electrode deposited one on another in the order mentioned.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.