Design and fabrication of semiconductor structure having complementary channel-junction insulated-gate field-effect transistors whose gate electrodes have work functions close to mid-gap semiconductor value
US5952701A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 18, 1997 |
| Grant date | Sep 14, 1999 |
| Priority date | — |
| Expiry date | Aug 18, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/85
Abstract
A pair of complementary CJIGFETs (100 and 160) are created from a body of semiconductor material (102 and 104). Each CJIGFET is formed with (a) a pair of laterally separated source/drain zones (112 and 114 or 172 and 174) situated along the upper surface of the semiconductor body, (b) a channel region (110 or 170) extending between the source/drain zones, and (c) a gate electrode (118 or 178) overlying, and electrically insulated from, the channel region. The gate electrode of each CJIGFET has a Fermi energy level within 0.3 ev of the middle of the energy band gap of the semiconductor material. One of the transistors typically conducts current according to a field-induced-channel mode while the other transistor conducts current according to a metallurgical-channel mode. The magnitude of the threshold voltage for each CJIGFET is normally no more than 0.5 V.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.