Semiconductor devices having protruding contacts
US5952718A · kind A · utility
26Cited by
5References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 24, 1997 |
| Grant date | Sep 14, 1999 |
| Priority date | — |
| Expiry date | Feb 24, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15788
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a protection layer covering the active layer of a semiconductor chip with an opening therein corresponding in location to a chip electrode located on the active surface of the semiconductor chip. Inside the opening a barrier layer covers the chip electrode, a diffusion barrier layer covers the barrier layer and a protruding contact protruding from the diffusion barrier layer. The protruding contact preferably comprises material whose hardness is lower than that of each of the barrier layer and chip electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.