Reference potential generator and a semiconductor memory device having the same
US5953277A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 1998 |
| Grant date | Sep 14, 1999 |
| Priority date | — |
| Expiry date | Mar 10, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A reference potential generator is constituted of two signal lines 21 and 22; a charge supplying circuit to supply charge to signal lines 21 and 22; a first connection circiut 24a and 24b connecting the charge supplying circuit 23 and two signal lines 21 and 22 in order to supply charge to the two signal lines; and a second connection circuit 25 connecting two signal lines 21 and 22 together by the second control signal, and two signal lines are disconnected after the potentials of the two signal lines determined by the supplied charge and each of load capacitances of signal lines are averaged. A semiconductor memory device of the invention incorporating the above reference potential generator generating an exact reference potential, is able to amplify and output the potential difference between the reference potential and the potential of data readout in the bit line, and by this, "1" or "0" of readout data can be precisely determined.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.