Semiconductor device with self-aligned insulator
US5955767A · kind A · utility
19Cited by
10References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 8, 1997 |
| Grant date | Sep 21, 1999 |
| Priority date | — |
| Expiry date | Aug 8, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76281
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having the advantages of an SOI structure without the attendant disadvantages is obtained by implanting oxygen ions using the gate electrode as a mask, and heating to form thin, self-aligned buried oxide regions extending from a field oxide region under source/drain regions self-aligned with the side surfaces of the gate electrode. In other embodiments, the thin buried oxide layer extends from a point in close proximity to the field oxide region and/or partially under the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.