Ohmic contact to Gallium Arsenide using epitaxially deposited Cobalt Digermanide
US5956604A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 8, 1997 |
| Grant date | Sep 21, 1999 |
| Priority date | — |
| Expiry date | Jul 8, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A partially ionized beam (PIB) deposition technique is used to heteroepitally deposit a thin film of CoGe.sub.2 (001) on GaAs (100) substrates 14. The resulting epitaxial arrangement is CoGe.sub.2 (001) GaAs (100). The best epitaxial layer is obtained with an ion energy 1100 eV to 1200 eV and with a substrate temperature of approximately 280.degree. Centigrade. The substrate wafers are treated only by immersion in HF:H.sub.2 O 1:10 immediately prior to deposition of the epitaxial layer. Contacts grown at these optimal conditions display ohmic behavior, while contacts grown at higher or lower substrate temperatures exhibit rectifying behavior. Epitaxial formation of a high melting point, low resistivity cobalt germanide phase results in the formation of a stable contact to n-GaAs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.