Kevin E. Mello
6Patents
2h-index
22Co-inventors
43Inventor score
Filing activity: Jul 8, 1997 → Jan 9, 2006
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7344983B2 | Clustered surface preparation for silicide and metal contacts | Electricity | 3 | Expired |
| US8288828B2 | Via contact structure having dual silicide layers | Electricity | 2 | Active |
| US7015140B2 | Selective salicidation methods | Electricity | 1 | Expired |
| US5956604A | Ohmic contact to Gallium Arsenide using epitaxially deposited Cobalt Digermanide | Electricity | 0 | Expired |
| US7538029B2 | Method of room temperature growth of SiOx on silicide as an etch stop layer for metal contact open of semiconductor devices | Electricity | 0 | Expired |
| US7479436B2 | Feed forward silicide control scheme based on spacer height controlling preclean time | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.