Ultra-low particle semiconductor cleaner using heated fluids
US5958146A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 24, 1998 |
| Grant date | Sep 28, 1999 |
| Priority date | — |
| Expiry date | Sep 24, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S134/902
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method (400) for cleaning a semiconductor wafer. The method includes immersing (420) a wafer in a hot or heated liquid comprising water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas comprising a cleaning enhancement substance during the providing step (450) also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.