Shallow trench isolation structure and method of forming the same
US5960297A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 2, 1997 |
| Grant date | Sep 28, 1999 |
| Priority date | — |
| Expiry date | Jul 2, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An isolation structure is provided by a method which includes forming a pad oxide layer on a semiconductor substrate and then forming a pad nitride layer on the pad oxide layer. An opening is then formed which extends through the pad nitride layer, the pad oxide layer, and into the semiconductor substrate. The pad nitride layer is then isotropically etched, thereby pulling-back the pad nitride layer from the portion of the opening extending through the pad oxide layer. An insulating layer is formed to fill in the opening including the portion of the opening formed by the pulling-back of the pad nitride layer. The deposited insulating layer is then planarized using the pulled-back nitride layer as a stopper layer. The pulled-back pad nitride layer and the pad oxide layer are then removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.