Metal wire of semiconductor device and method for forming the same
US5960313A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | May 7, 1997 |
| Grant date | Sep 28, 1999 |
| Priority date | — |
| Expiry date | May 7, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal wire and a method for forming a metal wire of a semiconductor device, including the steps of forming an insulating layer and first etch-stop layer on a substrate forming a first trench having sidewalls and a bottom by selectively removing portions of said first etch-stop layer forming a second etch-stop layer on the insulating layer, including the first trench, and first-etch stop layer etching back said second etch-stop layer from within the trench to form a mask from said first and second etch-layers exposing a portion of the trench bottom, wherein the width of the mask has a width of less than the width of the trench bottom etching the insulating layer using said first and second etch-stop layers mask to form a second trench extending through the insulating layer for holding a contact plug removing said first and second etch-stop layers and forming a contact plug and conductive layer in said first and second trenches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.