Young Kwon Jun
71Patents
17h-index
16Co-inventors
81Inventor score
Filing activity: Jan 16, 1992 → Dec 23, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5256587A | Methods of patterning and manufacturing semiconductor devices | Emerging Cross-Sectional Technologies | 70 | Expired |
| US5229315A | Method for forming an isolated film on a semiconductor device | Emerging Cross-Sectional Technologies | 68 | Expired |
| US5342800A | Method of making memory cell capacitor | Emerging Cross-Sectional Technologies | 63 | Expired |
| US5798965A | Dynamic random access memory having no capacitor and method for fabricating the same | Electricity | 54 | Expired |
| US5459094A | Method for fabricating a capacitor cell in the semiconductor memory device having a step portion | Electricity | 47 | Expired |
| US6261896A | Memory device and method of forming the same | Electricity | 38 | Expired |
| US5945706A | Memory device | Electricity | 36 | Expired |
| US5707274A | Chemical mechanical polishing apparatus for semiconductor wafer | Performing Operations; Transporting | 36 | Expired |
| US5897369A | Method for forming interconnection of a semiconductor device | Electricity | 32 | Expired |
| US5427982A | Method for fabricating a semiconductor device | Electricity | 25 | Expired |
| US6013578A | Method for forming a metal wiring structure of a semiconductor device | Electricity | 24 | Expired |
| US5561327A | Multilayer interconnection structure for a semiconductor device | Electricity | 20 | Expired |
| US5393373A | Methods of patterning and manufacturing semiconductor devices | Emerging Cross-Sectional Technologies | 20 | Expired |
| US5587331A | Method of forming a contact hole for a metal line in a semiconductor device | Electricity | 18 | Expired |
| US5336630A | Method of making semiconductor memory device | Emerging Cross-Sectional Technologies | 18 | Expired |
| US5960313A | Metal wire of semiconductor device and method for forming the same | Electricity | 18 | Expired |
| US5409855A | Process for forming a semiconductor device having a capacitor | Electricity | 17 | Expired |
| US5915191A | Method for fabricating a semiconductor device with improved device integration and field-region insulation | Electricity | 17 | Expired |
| US6043149A | Method of purifying a metal line in a semiconductor device | Chemistry; Metallurgy | 16 | Expired |
| US5641383A | Selective etching process | Electricity | 16 | Expired |
| US5219780A | Method for fabricating a semiconductor memory cell | Electricity | 15 | Expired |
| US5684331A | Multilayered interconnection of semiconductor device | Electricity | 15 | Expired |
| US6171967A | Method for forming a self-aligned metal wire of a semiconductor device | Electricity | 14 | Expired |
| US5880023A | Process for formation of wiring layer in semiconductor device | Electricity | 13 | Expired |
| US5231044A | Method of making semiconductor memory elements | Electricity | 13 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.