Method of forming a contact via
US5960321A · kind A · utility
9Cited by
8References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 19, 1997 |
| Grant date | Sep 28, 1999 |
| Priority date | — |
| Expiry date | Jun 19, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76801
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a contact via includes forming a wiring, a first insulator layer, and a spin-on glass layer, respectively, over a semiconductor substrate. Fluorine ions are implanted into the spin-on glass layer. A second insulator layer is formed over the spin-on glass layer. The wiring is exposed by patterning the second insulator layer, the spin-on glass layer, and the first insulator layer, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.