Metal ion reduction in photoresist compositions by chelating ion exchange resin
US5962183A · kind A · utility
10Cited by
29References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 27, 1995 |
| Grant date | Oct 5, 1999 |
| Priority date | — |
| Expiry date | Nov 27, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0236
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides methods for producing a photoresist having a very low level of metal ions, utilizing a treated chelating ion exchange resins to make the neutral ammonium salt or acid form. A method is also provided for producing semiconductor devices using such photoresist compositions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.