Silicone polymer composition, method of forming a pattern and method of forming an insulating film
US5962581A · kind A · utility
48Cited by
9References
36Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 26, 1996 |
| Grant date | Oct 5, 1999 |
| Priority date | — |
| Expiry date | Apr 26, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/121
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
A method of forming a pattern comprising the steps of forming a film of an organosilane compound comprising a polysilane having a repeating unit represented by the following general formula (1) on a substrate, irradiating an actinic radiation onto a predetermined portion of the film of the organosilane compound formed on the substrate, and removing the predetermined portion of the film irradiated by the actinic radiation by dissolving it with an aqueous alkaline developing solution. ##STR1## wherein Ar is a substituted or non-substituted aryl group.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.