Low voltage triggering electrostatic discharge protection circuit
US5962876A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 6, 1998 |
| Grant date | Oct 5, 1999 |
| Priority date | — |
| Expiry date | Apr 6, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/60
Abstract
An electrostatic discharge protection circuit comprises a semiconductor layer of a first conductivity type, a floating semiconductor layer of a second conductivity type, a first doped region of the first conductivity type, a first doped region of the second conductivity type, a second doped region of the second conductivity type, a gate structure, and a second doped region of the first conductivity type. The floating semiconductor layer of a second conductivity type is in contact with the semiconductor layer of a first conductivity type to establish a junction therebetween. The first doped region of the first conductivity type is formed in the semiconductor layer of a second conductivity type and connected to a first node. The first doped region of the second conductivity type is formed in the semiconductor layer of a first conductivity type and connected to a second node. The second doped region of the second conductivity type spans the junction. The gate structure overlies a portion of the semiconductor layer of a first conductivity type between those doped regions of the second conductivity type. The second doped region of the first conductivity type is formed in the semiconduct…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.