Semiconductor laser device and manufacturing method thereof
US5963572A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 26, 1996 |
| Grant date | Oct 5, 1999 |
| Priority date | — |
| Expiry date | Dec 26, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/222
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device including an n-type cladding layer, an active layer, a p-type cladding layer having a ridge portion, an n-type optical confinement layer formed on the flat portion and side surfaces of the ridge portion of the p-type cladding layer, and an n-type current blocking layer formed on the n-type optical confinement layer in this order. The optical confinement layer is composed of a low resistivity layer doped with n-type impurity, which has a smaller refractive index than the p-type cladding layer and a bandgap energy greater than the energy of lasing light. The optical confinement layer has an impurity concentration of 5.times.10.sup.7 cm.sup.-3 or less. The n-type current blocking layer has a thickness of 0.4 .mu.m or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.