Technique for determining semiconductor substrate thickness
US5963781A · kind A · utility
18Cited by
1References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 30, 1997 |
| Grant date | Oct 5, 1999 |
| Priority date | — |
| Expiry date | Sep 30, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30107
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The invention relates to a method of measuring the thickness of a semiconductor substrate. First, a semiconductor substrate having a thickness and a photocurrent generating structure is provided. Next, the semiconductor substrate is exposed to a light source and a current generated by the light source is measured across the photocurrent generating structure. Finally, the thickness of the semiconductor substrate is determined by the current measurement.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.