Manufacturing method of a semiconductor apparatus having an electron donative surface in a side wall portion
US5963812A · kind A · utility
6Cited by
12References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 10, 1997 |
| Grant date | Oct 5, 1999 |
| Priority date | — |
| Expiry date | Mar 10, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/974
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.