Method of producing silicon carbide single crystal
US5964944A · kind A · utility
26Cited by
7References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 21, 1997 |
| Grant date | Oct 12, 1999 |
| Priority date | — |
| Expiry date | Mar 21, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An easy and low-cost method of producing a large-size and high-purity silicon carbide (SiC) single crystal includes reacting silicon vapor directly with a carbon-containing compound gas under a heated atmosphere (growth space 14) to grow a silicon carbide single crystal (15) on a silicon carbide seed crystal (12), in which the silicon vapor generated from molten silicon (13) is used as a silicon vapor source, and a hydrocarbon gas (9) (e.g., propane gas) is used as the carbon-containing compound gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.