System and method for measuring properties of a semiconductor substrate in a fabrication line
US5966019A · kind A · utility
46Cited by
9References
41Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 24, 1996 |
| Grant date | Oct 12, 1999 |
| Priority date | — |
| Expiry date | Apr 24, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A system for measuring a property of a semiconductor substrate, wherein an analyzer beam is generated and transmitted to the substrate, and a generation beam, superposed on top of the analyzer beam, is also generated and transmitted to the substrate. A response generated by the generation beam, in the substrate, causes a change in a predetermined characteristic of the analyzer beam that is measured by a detector. The property of the substrate is then determined from the change in a predetermined characteristic. The property measuring system may be used in a semiconductor fabrication process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.