Nondestructive readout memory utilizing ferroelectric capacitors isolated from bitlines by buffer amplifiers
US5966318A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 1996 |
| Grant date | Oct 12, 1999 |
| Priority date | — |
| Expiry date | Dec 17, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/223
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory includes a bitline data signal input (24), at least one memory unit (20), a writing circuit (128) which writes a polarization state into each memory unit (20) responsive to the bitline data signal input, and a sensing circuit (130) that senses a polarization state of each memory unit (20). Each memory unit (20) includes a ferroelectric capacitor (22) and a buffer amplifier (26) in electrical series relationship with the ferroelectric capacitor (22) and the bitline data signal input (24). The buffer amplifier (26) capacitively isolates the ferroelectric capacitor (22) from the bitline data signal input (24) so that the ferroelectric capacitor (22) may be made smaller in size than would otherwise be the case.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.