John J. Drab
39Patents
9h-index
34Co-inventors
75Inventor score
Filing activity: Aug 26, 1994 → Dec 11, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6101102A | Fixed frequency regulation circuit employing a voltage variable dielectric capacitor | Electricity | 151 | Expired |
| US6803794B2 | Differential capacitance sense amplifier | Physics | 18 | Expired |
| US5487030A | Ferroelectric interruptible read memory | Physics | 18 | Expired |
| US8261372B2 | Golf glove | Human Necessities | 16 | Active |
| USD594159S1 | Golf glove | General | 16 | Expired |
| US5638252A | Electrical device and method utilizing a positive-temperature-coefficient ferroelectric capacitor | Electricity | 14 | Expired |
| US5966318A | Nondestructive readout memory utilizing ferroelectric capacitors isolated from bitlines by buffer amplifiers | Physics | 11 | Expired |
| US5804823A | Bismuth layered structure pyroelectric detectors | Physics | 10 | Expired |
| US5729488A | Non-destructive read ferroelectric memory cell utilizing the ramer-drab effect | Physics | 9 | Expired |
| US7675066B1 | Erase-on-demand memory cell | Electricity | 4 | Active |
| US6303804A | Environmentally benign bismuth-containing spin-on precursor materials | Electricity | 4 | Expired |
| US10541461B2 | Tile for an active electronically scanned array (AESA) | Electricity | 4 | Active |
| US10242967B2 | Die encapsulation in oxide bonded wafer stack | Electricity | 4 | Active |
| US6054600A | Non-toxic solvent soluble group IV and V metal acid salt complexes using polyether acid anhydrides | Chemistry; Metallurgy | 4 | Expired |
| US6316651A | Environmentally benign Group II and Group IV or V spin-on precursor materials | Electricity | 4 | Expired |
| US10354975B2 | Barrier layer for interconnects in 3D integrated device | Electricity | 3 | Active |
| US7273942B1 | Water-soluble group III polyether acid salt complexes and thin films from same | Chemistry; Metallurgy | 3 | Expired |
| US9887195B1 | Coaxial connector feed-through for multi-level interconnected semiconductor wafers | Electricity | 3 | Active |
| US8053251B2 | Temperature-compensated ferroelectric capacitor device, and its fabrication | Electricity | 3 | Active |
| US6617629B1 | Optically readable ferroelectric memory cell | Physics | 2 | Expired |
| US7683854B2 | Tunable impedance surface and method for fabricating a tunable impedance surface | Electricity | 2 | Active |
| US9224768B2 | Pin diode structure having surface charge suppression | Electricity | 2 | Active |
| US6045030A | Sealing electronic packages containing bumped hybrids | Performing Operations; Transporting | 1 | Expired |
| US10128297B2 | Pin diode structure having surface charge suppression | Electricity | 1 | Active |
| US11854879B2 | Cu3Sn via metallization in electrical devices for low-temperature 3D-integration | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.