Method for fabricating a low trigger voltage silicon controlled rectifier and thick field device

US5966599A · kind A · utility

Assignee

• LSI Logic Corporation · US

Inventors

• John D. Walker · Colorado Springs, US
• David W. Daniel · Vancouver, US

Key dates

• Filing date: May 21, 1996
• Grant date: Oct 12, 1999
• Expiry date: May 21, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D8/80

Abstract

A method for fabricating a semiconductor device in a substrate. Active regions are defined within the substrate using a thin oxide layer and a silicon nitride layer with portions of the silicon nitride layer being etched away to expose the thin oxide layer. Field oxide regions are formed over regions other than the defined active regions. These field oxide regions are located between the active regions. The remaining portions of the silicon nitride layer and the thin oxide layer are removed and a sacrificial oxide layer is then grown on the surfaces of the active regions. A first mask, a N-well mask, is formed for implanting N-type dopants. A buried layer implanted using P-type dopants with the first mask in place. Thereafter, the N-well regions are implanted. The first mask is removed and a second mask is formed to define regions for implanting P-well regions using P-type dopants. The P-well regions are implanted using P-type dopants.